PROGRAMMABLE GATE DESIGN FOR MULTIPLE GATE TRANSISTOR
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United States of America
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Issued Date -
Mar 6, 2025
app pub date -
Sep 1, 2023
filing date -
Sep 1, 2023
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Abstract
A multiple gate transistor and method of its manufacture are described. The transistor comprises a common substrate, a source, a drain, a body, a first gate electrode and a second gate electrode. The first gate electrode and the second gate electrode are colinearly aligned along a horizontal plane of the common substrate and are separated by a dielectric wall. The dielectric wall provides electrical isolation between the first gate electrode and the second gate electrode.
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