Importance

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Abstract

A semiconductor device includes a substrate of first conductive type and an epitaxial layer; a first trench in the epitaxial layer; a first gate electrode structure in the first trench; a body region and the doped region of second conductivity type in the epitaxial layer, the body region is spaced apart from the first gate dielectric layer of the first gate electrode structure, the doped region is separated from the body region by the epitaxial layer and is contiguous with the first gate dielectric layer; a first electrode region of first conductivity type in the body region; a third gate structure on a top surface of the epitaxial layer, including a third gate and a third gate dielectric layer, the third gate structure partially overlaps the first gate dielectric layer and partially overlaps the body region; and a second electrode.

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First Claim