Importance

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Abstract

A semiconductor device includes a substrate with first conductivity type and an epitaxial layer; a first trench and a second trench in the epitaxial layer, the depth of the first trench being greater than that of the second trench; a first gate structure including a first gate in the first trench and a first gate dielectric layer; a second gate structure including a second gate in the second trench and a second gate dielectric layer between the second gate and the epitaxial layer; a body region with second conductivity type being spaced apart from the first gate dielectric layer and being contiguous with the second gate dielectric layer; a first electrode region having first conductivity type; a third gate structure on the epitaxial layer and partially overlapping with the body region; and a second electrode. The Avalanche Energy, Single Pulse (EAS) durability of the semiconductor device is improved.

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First Claim