NON-VOLATILE MEMORY DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250081472A1
SERIAL NO

18766970

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Abstract

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A non-volatile memory device includes a substrate, a first semiconductor layer including a memory cell array on the substrate, a second semiconductor layer including a peripheral circuit that is configured to write data to or read the data from the memory cell array, where the second semiconductor layer is on the first semiconductor layer, and a protrusion structure including a wire that extends into at least a portion of the first semiconductor layer and at least a portion of the second semiconductor layer, where the protrusion structure extends from a first surface of the first semiconductor layer and from a first surface of the second semiconductor layer, and where the protrusion structure extends in a second direction that is perpendicular to the first direction.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Junhyoung Suwon-si, KR 59 95
Kwon, Joonyoung Suwon-si, KR 13 0
Lee, Sehoon Suwon-si, KR 6 2
Sung, Sukkang Suwon-si, KR 65 28

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