Importance

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Abstract

A vertical semiconductor device includes: a plurality of insulation patterns on a substrate, the plurality of insulation patterns being spaced apart from each other in a vertical direction; a plurality of channel structures being spaced apart from each other in a first direction, each of the plurality of channel structures including interface insulation patterns, and the plurality of channel structures disposed in a first trench extending in the first direction and passing through the insulation patterns in the vertical direction; a ferroelectric structure on an outer surface of each of the plurality channel structures, the ferroelectric structure protruding in a direction toward a gap between some of the insulation patterns in the vertical direction; and a conductive pattern on a sidewall of the ferroelectric structure, the conductive pattern filling the gap in the vertical direction.

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First Claim