THROUGH WAFER TRENCH ISOLATION BETWEEN TRANSISTORS IN AN INTEGRATED CIRCUIT
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United States of America
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Issued Date -
Mar 6, 2025
app pub date -
Nov 18, 2024
filing date -
Nov 18, 2024
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Abstract
In some examples, a semiconductor device comprises a substrate, a trench, and a layer of a dielectric material. The substrate includes a semiconductor material and has opposing first and second surfaces. The trench extends between the first surface and the second surface, the trench having the dielectric material. The layer of the dielectric material is on the second surface of the substrate and is contiguous with the dielectric material in the trench.
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