SEMICONDUCTOR DEVICE AND ISOLATION STRUCTURE AND CONTACT ETCH STOP LAYER THEREOF
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United States of America
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Issued Date -
Mar 6, 2025
app pub date -
Sep 1, 2023
filing date -
Sep 1, 2023
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Abstract
A semiconductor device and an isolation structure and a contact etch stop layer thereof are provided. According to an embodiment of the present disclosure, a semiconductor device is provided, which includes a first dielectric layer and a second dielectric layer. The first dielectric layer is deposited on the sidewall of an active device or formed in a trench of a gate structure. The second dielectric layer covers the first dielectric layer, wherein the dielectric constant of the first dielectric layer is between 2 and 2.5, and the dielectric constant of the second dielectric layer is less than or equal to 4. In some embodiments, a dielectric bilayer is composed of amorphous boron nitride and crystalline boron nitride.
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