Importance

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Abstract

A semiconductor memory device includes conductive layers stacked in a stacking direction, a semiconductor column opposed to the conductive layers, a semiconductor member connected to the semiconductor column, a contact electrode connected to the semiconductor member, a first insulating member separating a part of the conductive layers in a first direction, and a second insulating member disposed inside the first insulating member. The contact electrode includes a first conductive region provided at an opposite side of the semiconductor column in the stacking direction with respect to a surface of the semiconductor member at the contact electrode side in the stacking direction and a second conductive region provided at a semiconductor column side in the stacking direction with respect to the surface of the semiconductor member between the semiconductor member and the second insulating member. The second conductive region is in contact with the second insulating member.

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First Claim