Plasma Etched Compound Semiconductor
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United States of America
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Issued Date -
Mar 6, 2025
app pub date -
Mar 17, 2024
filing date -
Mar 17, 2024
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Abstract
A silicon carbide substrate is etched to form a tapered feature. The plasma etch step includes generating a plasma from an etchant gas mixture comprising at least one chlorine-containing component, at least one inert gas component and at least one passivation material precursor. The anisotropic etching of the substrate comprises deposition of a passivation material.
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