MEMORY DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250078885A1
SERIAL NO

18949858

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Abstract

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A memory device includes a memory array, a first latch and a first logic element. The memory array is configured to operate according to a first global write signal. The first latch is configured to generate a first latch write data based on a clock signal. The first logic element is configured to generate the first global write signal based on the clock signal and the first latch write data.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78
TSMC CHINA COMPANY LIMITED4000 WEN XIANG ROAD SONGJIANG SHANGHAI
TSMC NANJING COMPANY LIMITED16 ZIFENG ROAD PUKOU ECONOMIC DEVLOPMENT ZONE JIANGSU PROVINCE NANJING

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LI, Pei-Le Nanjing City, CN 4 2
WAN, He-Zhou Shanghai City, CN 54 55
WU, Ching-Wei Nantou County, TW 89 297
YANG, Xiu-Li Shanghai City, CN 35 21

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