NEW DESIGN OF EUV VESSEL PERIMETER FLOW AUTO ADJUSTMENT
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United States of America
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Issued Date -
Mar 6, 2025
app pub date -
Nov 14, 2024
filing date -
Nov 14, 2024
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Abstract
In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.
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