OPC METHOD AND MASK MANUFACTURING METHOD INCLUDING OPC METHOD

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250076749A1
SERIAL NO

18646070

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Abstract

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Provided are an optical proximity correction (OPC) method and a mask manufacturing method including the OPC method for implementing a simulation contour more stiffly to ensure a processing margin. The OPC method includes receiving a design layout for a target pattern, obtaining an OPC pattern by performing first OPC on the design layout, extracting a transition area as an area having a width that changes from a first width to a second width, which is less than the first width, from the target pattern, obtaining a simulation contour for the transition area, calculating at least one of a correction length and a correction angle based on the simulation contour, obtaining a first OPC pattern for the transition area based on at least one of the correction length and the correction angle, and obtaining a final OPC pattern by merging the first OPC pattern with the OPC pattern.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jongdoo Suwon-si, KR 20 15
NA, Yeojin Suwon-si, KR 2 0
Park, Juyun Suwon-si, KR 3 1

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