Importance

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Abstract

Disclosed is a method for fabricating high-aspect-ratio gratings that includes providing a semiconductor substrate. The method further includes depositing a first layer of a first silicon-based material on the semiconductor substrate; depositing a second layer of a second silicon-based material on the first layer; and depositing a third layer of a resist material on the second layer. The method further includes forming a pattern in the third layer by exposing the resist material. The method further includes transferring the pattern from the third layer into the second layer by etching; and transferring the pattern from the second layer into the first layer by etching, using the patterned second layer as a first mask layer. The method further includes forming a grating into the semiconductor substrate by etching, using the patterned first layer as a second mask layer.

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First Claim