Importance

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Abstract

A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.

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First Claim