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Abstract

A processing method of a wafer includes irradiating the wafer with a laser beam in an annular pattern a predetermined distance from an outer peripheral edge of the wafer, thereby forming an annular modified layer and cracks spreading from the modified layer, before forming the modified layer, storing anticipated regions indicating regions which are part of an annular region that extends along the outer peripheral edge and is to be irradiated with the laser beam and in each of which a failure of formation of the cracks spreading from the modified layer is anticipated, and after the modified layer is formed, grinding the wafer on a side of a back surface thereof to thin the wafer to a finish thickness. In forming the modified layer, the anticipated regions are irradiated with the laser beam under irradiation conditions different from those for the annular region excluding the anticipated regions.

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