ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR WAFER USING THE ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, AND MANUFACTURING METHODS OF THE SAME
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United States of America
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Feb 20, 2025
app pub date -
Dec 26, 2022
filing date -
Dec 26, 2022
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Abstract
A single crystal AlN substrate includes a first surface and a second surface as an opposite side surface of the first surface. The first surface has a flat surface as an Al-polar surface and an inclined surface formed from an outer edge of the flat surface to a side surface. The second surface is an N-polar surface. The inclined surface is formed up to a position having a distance from an end portion of the single crystal AlN substrate in a direction along the flat surface of 0.45 mm or more and 0.75 mm or less, and is formed up to a position having a distance from the flat surface in a direction perpendicular to the flat surface of 0.2 mm or more and 0.3 mm or less.
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