SINGLE-PHOTON AVALANCHE DIODES WITH AN INTEGRATED ACTIVE DEVICE
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United States of America
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Feb 20, 2025
app pub date -
Aug 16, 2023
filing date -
Aug 16, 2023
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Abstract
Structures including a single-photon avalanche diode and methods of forming such structures. The structure comprises a semiconductor substrate including a trench. The trench surrounds a portion of the semiconductor substrate. The structure further comprises a deep trench isolation region that includes a dielectric layer and a semiconductor layer inside the trench. The dielectric layer is disposed between a sidewall of the trench and the semiconductor layer. The structure further comprises an active device that includes a doped region in the semiconductor layer.
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