SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America
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Issued Date -
Feb 20, 2025
app pub date -
Feb 6, 2024
filing date -
Feb 6, 2024
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Abstract
A semiconductor device according to an embodiment includes: a first electrode; a first semiconductor region of a first conductive type provided on the first electrode; a second semiconductor region of a second conductive type provided on the first semiconductor region; a third semiconductor region of a first conductive type provided on the second semiconductor region; a gate electrode provided in the second semiconductor region via a gate insulating film; a contact portion having a first portion and a second portion; and a second electrode electrically connected to the contact portion. The first portion is aligned with the third semiconductor region and a part of the second semiconductor region, and the second portion is provided at a lower end of the first portion and has a width larger than a width of the first portion at an upper end of the third semiconductor region.
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