SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Feb 20, 2025
app pub date -
Aug 18, 2023
filing date -
Aug 18, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of nanostructures formed over a substrate, and an inner spacer layer between two adjacent nanostructures. The semiconductor structure includes a source/drain (S/D) structure formed adjacent to the inner spacer layer, and a barrier layer adjacent to the inner spacer layer. The barrier layer extends from the first position to the second position, and the first position is between the inner spacer layer and the nanostructure, and the second position is between the nanostructures and the S/D structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully