Importance

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Abstract

A semiconductor device includes a transistor having a plurality of gate trenches formed in a semiconductor substrate, the gate trenches patterning the semiconductor substrate into ridges. The transistor further includes a gate electrode arranged in at least one of the gate trenches. A source region, a channel region and a part of a current spread region are arranged in the ridges. The semiconductor device further includes a superjunction structure arranged at a larger distance to the source region than the channel region. The superjunction structure includes a first compensation region of the first conductivity type and a second compensation region of the second conductivity type. A doping concentration of the doped portion of the second conductivity type of the channel region decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridge.

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First Claim