Importance

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Abstract

A power semiconductor is disclosed and for high-voltage and high-power operation. An example power semiconductor comprises: a substrate; a drift layer formed in the substrate including an active area having doped regions and a termination area configured to surround the active area; and a junction termination extension (JTE) in the termination area. In some aspects, the substrate and the drift layer comprise a first conductivity type, the doped regions and the JTE comprise a second conductivity type, the JTE comprises at least one blocking region adjacent to an edge of the active area and a plurality of separation regions, each separation region of the plurality of separation regions comprises two or more separation sub-regions, and the two or more separation sub-regions are configured to have a different dopant concentrations

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First Claim