MEMORY DEVICES INCLUDING CAPACITORS

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250063719A1
SERIAL NO

18935380

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Abstract

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A microelectronic device comprises array regions individually comprising memory cells comprising access devices and storage node device, digit lines coupled to the access devices and extending in a first direction, word lines coupled to the access devices and extending in a second direction orthogonal to the first direction, and control logic devices over and in electrical communication with the memory cells. The microelectronic device further comprises capacitor regions horizontally offset from the array regions in the first direction and having a dimension in the second direction greater than each individual array region in the second direction. The capacitor regions individually comprise additional control logic devices vertically overlying the memory cells, and capacitor structures within horizontal boundaries of the additional control logic devices. Related microelectronic devices, electronic systems, and methods are also described.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
He, Yuan Boise, US 242 2114
Simsek-Ege, Fatma Arzum Boise, US 160 1413

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