MULTIMETER-WAVE ACOUSTIC RESONATORS
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United States of America
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Feb 20, 2025
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Aug 16, 2024
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Aug 16, 2024
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Abstract
Exemplary multimeter-wave acoustic resonators and methods employing intermediate layers in the fabricating of piezoelectric devices based on thin-film lithium niobate/lithium tantalate or aluminum nitride/scandium aluminum nitride on a substrate in a film stack that can use higher order first and third antisymmetric bulk acoustic tones. In some embodiments, the acoustic resonator comprises a base substrate of a material with low electromagnetic loss, a piezoelectric film layer that is suspended over the base substrate, and an interdigitated electrode (IDE) array formed by a pair of independently addressable microelectrode arrays disposed on a top surface of the piezoelectric film layer to resonantly vibrate at a range of frequencies greater than 6 GHz. The piezoelectric film layer was formed over an intermediate or sacrificial layer positioned between the base substrate and the piezoelectric film layer and then etched to provide the piezoelectric film layer suspended over the base substrate.
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