METAL IMPLANTATION TO BARRIER OR LINER FOR INTERCONNECT
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United States of America
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Issued Date -
Feb 20, 2025
app pub date -
Jun 20, 2024
filing date -
Jun 20, 2024
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Abstract
A method of forming a metal interconnect in a semiconductor structure includes performing a barrier layer deposition process to deposit a barrier layer within an opening formed through a dielectric layer, performing a liner deposition process to deposit a liner layer on the barrier layer, performing a metal treatment process to implant metal dopants into a surface of the liner layer, and performing a gap fill process to form a metal interconnect on the metal treated surface of the liner layer within the opening.
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