PHOTORESIST STRIPPER COMPOSITION AND METHOD FOR FORMING PATTERN USING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Feb 20, 2025
app pub date -
Aug 15, 2024
filing date -
Aug 15, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A photoresist stripper composition according to one or more embodiments includes an amine compound, a cyclic alcohol, a protic polar organic solvent, an aprotic polar organic solvent, and a polyhydric alcohol having 4 to 6 carbon atoms. The amine compound in the photoresist stripper composition may have a molecular weight of about 80 g/mol or less, and a HSPo value according to Equation 1 of about 27 to about 32. The photoresist stripper composition according to one or more embodiments may be utilized in a process of removing a photoresist pattern formed on a lower film, and may supply an excellent or suitable strip ability for photoresist and characteristics of preventing or reducing damage of the lower film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully