PHOTOLITHOGRAPHY METHOD USING CASTELLATION SHAPED ASSIST FEATURES TO FORM A LINE-AND-SPACE PATTERN AND PHOTOMASK CONTAINING THE ASSIST FEATURES
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United States of America
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Issued Date -
Feb 20, 2025
app pub date -
Aug 17, 2023
filing date -
Aug 17, 2023
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Abstract
A method of patterning a structure includes applying a photoresist layer over a material layer located over substrate, lithographically exposing the photoresist layer by passing an exposure radiation beam through a photomask, developing the exposed photoresist layer, and etching the material layer using the developed photoresist layer as a mask. The photomask contains a photomask pattern including a combination of a line-and-space pattern and a peripheral castellation pattern. The peripheral castellation pattern includes a combination of an end straight line dummy pattern and a plurality of hammerhead patterns attached to a lengthwise sidewall of the end straight line dummy pattern.
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