REFLECTIVE MASK BLANK AND MANUFACTURING METHOD OF REFLECTIVE MASK

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United States of America

APP PUB NO 20250060659A1
SERIAL NO

18793327

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Abstract

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A fine and preferable pattern of an absorption film can be formed from the absorption film that can be patterned by dry etching using a gas containing oxygen (O) by a reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate, and reflects exposure light, an absorption film that is formed on the multilayer reflection film, and absorbs the exposure light, and an etching mask film containing niobium (Nb) on the absorption film.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTD4-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-0005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
INAZUKI, Yukio Joetsu-shi, JP 113 794
KANEKO, Hideo Joetsu-shi, JP 98 438
KOSAKA, Takuro Joetsu-shi, JP 52 118
MIMURA, Shohei Joetsu-shi, JP 16 76
OGOSE, Taiga Joetsu-shi, JP 9 1
SAKURAI, Keisuke Joetsu-shi, JP 7 0

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