METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

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United States of America

APP PUB NO 20250060537A1
SERIAL NO

18938223

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Abstract

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A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KUO, Feng-Wei Hsinchu County, TW 110 154
Liao, Wen-Shiang Miaoli County, TW 139 787

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