GAN RELIABILITY BUILT-IN SELF TEST (BIST) APPARATUS AND METHOD FOR QUALIFYING DYNAMIC ON-STATE RESISTANCE DEGRADATION
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United States of America
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Feb 20, 2025
app pub date -
Nov 4, 2024
filing date -
Nov 4, 2024
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Abstract
An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.
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