METAL OXIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Feb 13, 2025
app pub date -
Oct 28, 2024
filing date -
Oct 28, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The techniques described herein relate to a semiconductor structure including: a substrate, or a single crystal growth surface, including single crystal 4H-SiC(0001); a buffer layer on the single crystal growth surface; and an epitaxial oxide layer on the buffer layer. The buffer layer can include a crystal symmetry type that is compatible with the single crystal 4H-SiC(0001). The epitaxial oxide layer can include single crystal (AlxGa1-x)2O3 with a monoclinic or corundum crystal symmetry, and where 0≤x≤1.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully