ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Aug 7, 2023
filing date -
Aug 7, 2023
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to asymmetric junctionless fin field effect transistor (FINFET) structures and methods of manufacture. The structure includes: a nanowire fin comprising a first width adjacent to a source region and a second width adjacent to a drain region, the first width and the second width being different dimensions; and a gate structure over the nanowire fin, the gate structure spanning over the first width and the second width and being between the source region and the drain region.
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