CONTROLLING FIN-THINNING THROUGH FEEDBACK
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Oct 30, 2024
filing date -
Oct 30, 2024
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Abstract
A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.
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