MEMORY DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250056816A1
SERIAL NO

18780515

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Abstract

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A memory device includes a plurality of first peripheral circuits, a stack memory cell array and a first address circuit. The first peripheral circuits are disposed on a first chip, wherein the first chip has a plurality of first pads. The stack memory cell array is disposed on a second chip, wherein the second chip has a plurality of second pads. The second pads are coupled to the stack memory cell array, and respectively coupled to corresponding first pads. The first address circuit is disposed on the second chip, coupled to the stack memory cell array, and disposed under the stack memory cell array.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hsing-Wen Miaoli County, TW 13 56
Chang, Yao-Wen Hsinchu County, TW 209 1504
Chen, Yung-Hsiang Taipei City, TW 186 2102
Yang, I-Chen Miaoli County, TW 47 76

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