RADIO FREQUENCY AMPLIFICATION CIRCUIT
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Oct 31, 2024
filing date -
Oct 31, 2024
priority date (Note) -
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Abstract
A radio frequency amplification circuit includes an amplification transistor, a first transistor, and a Schottky barrier diode. The amplification transistor has a base to which a radio frequency signal is supplied and a collector from which the radio frequency signal amplified is outputted, and is made of a compound semiconductor. The first transistor has a base to which a first bias is supplied, and an emitter electrically coupled to the base of the amplification transistor and configured to supply a second bias to the base of the amplification transistor, and is made of the compound semiconductor. The Schottky barrier diode has an anode electrically coupled to the base of the first transistor and a cathode electrically coupled to the emitter of the first transistor.
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