SEMICONDUCTOR DEVICE, CHIP AND FABRICATION METHOD THEREOF, MEMORY SYSTEM
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Dec 6, 2023
filing date -
Dec 6, 2023
priority date (Note) -
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Abstract
According to one aspect of the present disclosure, semiconductor device is provided. The semiconductor device may include a plurality of cutting lanes. The plurality of cutting lanes may include at least one first cutting lane. The plurality of cutting lanes may include a plurality of second cutting lanes disposed in parallel with the first cutting lane. The plurality of cutting lanes may include a third cutting lane disposed intersecting the first cutting lane and the second cutting lanes. The semiconductor device may include a plurality of dies defined by the intersection of the plurality of cutting lanes. The semiconductor device may include a die test structure only located in the first cutting lane. Any one of the at least one first cutting lane may be disposed adjacent to at least one of the plurality of second cutting lanes.
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