Importance

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Abstract

Semiconductor structures having low resistance via contacts and methods of fabricating the same are provided. An example semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a resistor disposed in the dielectric layer, and a resistor via contact disposed in the dielectric layer the resistor. The resistor via contact further includes a first layer disposed on and in contact with the resistor, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first layer has a first thickness and includes a first material having a first resistivity, the second layer has a second thickness and includes a second material, and the third layer has a third thickness and includes a third material having a second resistivity. The first thickness is more than the third thickness, and the first resistivity is less than the second resistivity.

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First Claim