METHODS OF ETCHING CARBON-CONTAINING FEATURES AT LOW TEMPERATURES
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Aug 11, 2023
filing date -
Aug 11, 2023
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Abstract
Exemplary semiconductor processing methods may include providing an oxygen-containing precursor and a sulfur-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of carbon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The contacting may etch a feature in the layer of carbon-containing material. A chamber operating temperature may be maintained at less than or about 0° C.
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