METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Jul 15, 2024
filing date -
Jul 15, 2024
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Abstract
A method includes: providing a Group III nitride-based substrate having a first major surface and a doped Group III nitride region; forming a first passivation layer configured as a hydrogen diffusion barrier on the first major surface; forming a first opening in the first passivation layer and exposing at least a portion of the doped Group III nitride region from the first passivation layer; activating a first doped Group III nitride region whilst the first passivation layer is located on the first major surface and the doped Group III nitride region is at least partly exposed from the first passivation layer; forming a second passivation layer on the first passivation layer and on the doped Group III nitride region; forming a second opening in the first and second passivation layers and exposing a portion of the doped Group III nitride region; and forming a contact in the second opening.
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