Importance

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Abstract

A memory device includes a memory cell array, a control logic which controls a read operation to read hard decision data and soft decision data from each page, and a page buffer which includes a first latch related to sensing of the hard decision data and a second latch related to sensing of the soft decision data. The control logic controls performing a first sensing operation of storing a value determined based on a first offset level, in the second latch, at a first sensing timing, and a second sensing operation of storing a value determined based on a second offset level, in the second latch, at a second sensing timing, and performs a control operation to provide a set signal SET to the second latch in the first sensing operation, and provide a reset signal RST to the second latch in the second sensing operation.

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First Claim