CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES
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United States of America
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Feb 13, 2025
app pub date -
Oct 28, 2024
filing date -
Oct 28, 2024
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Abstract
An example method of performing read operation comprises: receiving a read request with respect to a set of memory cells of a memory device; determining a value of a media endurance metric of the set of memory cells; determining a programing temperature associated with the set of memory cells; determining a current operating temperature of the memory device; determining a voltage adjustment value based on the value of the media endurance metric, the programming temperature, and the current operating temperature; adjusting, by the voltage adjustment value, a bitline voltage applied to a bitline associated with the set of memory cells; and performing, using the adjusted bitline voltage, a read operation with respect to the set of memory cells.
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