Importance

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Abstract

A nonvolatile memory device includes a memory block, a page buffer circuit and a control circuit. The page buffer circuit is connected to the cell strings through bit-lines. The control circuit controls a read operation by: latching a first sensing data and a second sensing data in the page buffer circuit by performing a first read operation on a selected word-line designated by an access address based on a read voltage set; latching a third sensing data in the page buffer circuit by performing a second read operation on an aggressor word-line adjacent to the selected word-line, based on at least one adjacent read voltage; selecting one of the first sensing data and the second sensing data as a hard decision data based on a program state of the third sensing data; and generating a soft decision data by using the first sensing data and the second sensing data.

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First Claim