MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Feb 13, 2025
app pub date -
Nov 25, 2022
filing date -
Nov 25, 2022
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Abstract
Provided is a mask blank having a structure in which a pattern-forming thin film, a first hard mask film, and a second hard mask film are stacked in this order on a main surface of a substrate. The pattern-forming thin film contains at least one element selected from silicon and transition metals. The first hard mask film contains chromium. The second hard mask film contains tantalum. The tantalum of the second hard mask film contains tantalum that is unsaturated with oxygen. The thickness of the pattern-forming thin film is 20 nm or more. The thickness of the first hard mask film is 15 nm or less. The thickness of the second hard mask film is 10 nm or less.
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