EXTREME ULTRAVIOLET LIGHT REFLECTIVE STRUCTURE INCLUDING NANO-LATTICE AND MANUFACTURING METHOD THEREOF

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United States of America

APP PUB NO 20250053076A1
SERIAL NO

18931987

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Abstract

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An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHENG, Wen-Hao Hsinchu, TW 102 272
KOAI, Keith Kuang-Kuo Hsinchu, TW 23 29
KU, Benny Hsinchu, TW 4 1

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