SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

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United States of America

APP PUB NO 20250048936A1
SERIAL NO

18919382

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Abstract

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A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hung-Yueh Hsinchu City, TW 74 251
Hsu, Po-Kai Tainan City, TW 67 58
Jhang, Jing-Yin Taipei City, TW 73 124
Wang, Hui-Lin Taipei City, TW 132 187
Wang, Yu-Ping Hsinchu City, TW 130 611
Weng, Chen-Yi New Taipei City, TW 75 176

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