SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
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United States of America
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Issued Date -
Feb 6, 2025
app pub date -
Oct 17, 2023
filing date -
Oct 17, 2023
priority date (Note) -
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Abstract
A semiconductor device structure and methods of forming the same are described. The structure includes a first semiconductor layer disposed over a substrate, the first semiconductor layer has an edge portion and a center portion, and a height of the center portion is substantially greater than a height of the edge portion. The structure further includes a dielectric spacer disposed below and in contact with the edge portion of the first semiconductor layer, a gate dielectric layer surrounding the center portion of the first semiconductor layer, and a gate electrode layer disposed on the gate dielectric layer surrounding the center portion of the first semiconductor layer.
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