SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

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United States of America

APP PUB NO 20250048703A1
SERIAL NO

18490363

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Abstract

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Semiconductor devices and methods of manufacture are presented. In embodiments a method of manufacturing the semiconductor device includes forming a fin from a plurality of semiconductor materials, depositing a dummy gate over the fin, depositing a plurality of spacers adjacent to the dummy gate, removing the dummy gate to form an opening adjacent to the plurality of spacers, widening the opening adjacent to a top surface of the plurality of spacers, after the widening, removing one of the plurality of semiconductor materials to form nanowires, and depositing a gate electrode around the nanowires.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shu-Han Hsinchu, TW 42 49
Chui, Chi On Hsinchu, TW 525 1267
Lin, Cheng-I Hsinchu, TW 61 464
Tang, Hao-Ming Taipei City, TW 4 0
Wei, Cheng-Yu Taoyuan City, TW 9 29

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