Importance

Loading Importance Indicators...

Abstract

A method of manufacturing a semiconductor device includes forming first and second active regions; forming first to fifth gate electrodes, the second gate electrode being between the first and third gate electrodes, the fourth gate electrode being between the third and fifth gate electrodes; and selectively replacing at least one portion of at least one of the gate electrodes with an isolation dummy gate, including: replacing the first and fifth gate electrodes with first and second isolation dummy gates formed in trenches through the first and second active regions; and replacing a first portion of the third gate electrode overlying the second active region with a third isolation dummy gate formed in a first trench through the second active region, resulting in a second portion of the third gate over the first active region, and the third isolation dummy gate aligned with the second portion of the third gate.

Loading the Abstract Image...

First Claim