SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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United States of America
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Issued Date -
Feb 6, 2025
app pub date -
May 15, 2024
filing date -
May 15, 2024
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Abstract
A semiconductor memory device including a cell array structure and a peripheral circuit structure is provided. The cell array structure includes a first stack structure, a second stack structure on the first stack structure, and a third stack structure on the second stack structure, each of the first to third stack structures including a plurality of word lines, vertical channel structures extending into the first to third stack structures, and a second cell contact plug extending into the first to third stack structures and connected to a second contact plug at an end of a second word line in the second stack structure. The second cell contact plug includes a first horizontal protrusion having a horizontal width that increases discontinuously at a connection portion of the first stack structure and the second stack structure.
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