REDUCTION OF SIZE OF EDGE CELL REGION IN MEMORY DEVICES

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250048612A1
SERIAL NO

18404467

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Abstract

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An integrated circuit (IC) device has a memory region in which a plurality of memory cells is implemented. Each of the memory cells has a first dimension in a first horizontal direction. The IC device includes an edge region bordering the memory cell region in the first horizontal direction. The edge region has a second dimension in the first horizontal direction. The second dimension is less than or equal to about 4 times the first dimension. The IC device is formed by revising a first IC layout to generate a second IC layout. The second IC layout is generated by shrinking a dimension of the edge region in the first horizontal direction.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Feng-Ming Hsinchu County, TW 113 664
Chen, Jui-Lin Taipei City, TW 97 180
Wang, Chih-Ching Kinmen County, TW 60 272
Wang, Ping-Wei Hsin-Chu, TW 186 1402
Wu, Yu-Bey Hsinchu City, TW 32 53

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