SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHODS THEREOF
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United States of America
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Issued Date -
Feb 6, 2025
app pub date -
Aug 4, 2023
filing date -
Aug 4, 2023
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Abstract
A method of forming a semiconductor structure includes forming a fin over a semiconductor substrate, forming an isolation region on sidewalls of the fin, forming a metal gate over the fin and the isolation region, etching the metal gate to form a trench through the isolation region, passivating the top portion of the semiconductor substrate exposed in the trench to form a dielectric layer at a bottom of the trench, and depositing a dielectric material in the trench to form a dielectric structure. The dielectric structure divides the metal gate into two sections.
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